Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications


This paper presents a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in CE configuration. The presented amplifier stage can achieve sub-1dB NF performance with 10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors’ knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.

IEEE Transactions on Circuits and Systems II: Express Briefs